RIE handy
Reactive Ion Etching System.
- Base Pressure < 2x10-7 Torr
- Substrate Size 6" diameter
- Substrate Cooling < 50 oC
- Anode to Cathode Distance Adjustment Two direction standard
- Deposition Method Capacitively Coupled PE-CVD
- Power Generator RF, 13.56 MHz
- Loading From top
- Control Full Automation by PC
For more detailed information, send an e-mail to info@vaksis.com.
