CVD handy twin tube
Combined Inductively Coupled Plasma (ICP) and Metallo-organic/Low Pressure Chemical Vapor Deposition (MO/LP CVD) System.
- Base Pressure < 2x10-7 Torr
- Leak Rate <10-8 Torr.l/s
- Process Pressure Range 0.1 - 10 Torr
- Split Type Tube Furnace Horizontal design
- Quartz Tube Diameter 70 mm
- Max. Temperature 1100oC
- Continuous Working Temperature 1050oC
- Heating Area Length 250 mm
- Temperature Control System PID method
- Number of MFC 3
- Number of Evaporation Bublers 3
- Pumps 1 turbomolecular pump and 2 mechanical pump
- Power Supply 1 RF (300 W)
- Control Full Automation on PC
For more detailed information, send an e-mail to info@vaksis.com.
