CVD handy PECVD New Model
This system can be used for deposition of a-Si:H, SiO2, Si3N4, DLC or similar thin films using Plasma Enhanced Chemical Vapor deposition technique.
- Base Pressure < 2x10-7 Torr
- Substrate Size 6" diameter
- Substrate Heating Max. 500 oC
- Anode to Cathode Distance Adjustment Two direction standard
- Deposition Method Capacitively Coupled PE-CVD
- Power Generator RF, 13.56 MHz
- Loading From top
- Control Full Automation by PC
For more detailed information, send an e-mail to info@vaksis.com.
